Micropatterning in bistable cholesteric device with Bragg's reflection

In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required for...

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Дата:2006
Автори: Gritsenko, M.I., Kucheev, S.I., Lytvyn, P.M., Tishenko, V.G., Tkach, V.M., Yelshansky, V.B.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121435
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1214352017-06-15T03:05:22Z Micropatterning in bistable cholesteric device with Bragg's reflection Gritsenko, M.I. Kucheev, S.I. Lytvyn, P.M. Tishenko, V.G. Tkach, V.M. Yelshansky, V.B. In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms. 2006 Article Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 42.79.Kr, 89.75 Kd http://dspace.nbuv.gov.ua/handle/123456789/121435 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms.
format Article
author Gritsenko, M.I.
Kucheev, S.I.
Lytvyn, P.M.
Tishenko, V.G.
Tkach, V.M.
Yelshansky, V.B.
spellingShingle Gritsenko, M.I.
Kucheev, S.I.
Lytvyn, P.M.
Tishenko, V.G.
Tkach, V.M.
Yelshansky, V.B.
Micropatterning in bistable cholesteric device with Bragg's reflection
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Gritsenko, M.I.
Kucheev, S.I.
Lytvyn, P.M.
Tishenko, V.G.
Tkach, V.M.
Yelshansky, V.B.
author_sort Gritsenko, M.I.
title Micropatterning in bistable cholesteric device with Bragg's reflection
title_short Micropatterning in bistable cholesteric device with Bragg's reflection
title_full Micropatterning in bistable cholesteric device with Bragg's reflection
title_fullStr Micropatterning in bistable cholesteric device with Bragg's reflection
title_full_unstemmed Micropatterning in bistable cholesteric device with Bragg's reflection
title_sort micropatterning in bistable cholesteric device with bragg's reflection
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121435
citation_txt Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:26Z
last_indexed 2023-10-18T20:39:26Z
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