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Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x

We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide,...

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Main Authors: Venger, E.F., Knorozok, L.M., Melnichuk, L.Yu., Melnichuk, O.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121438
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spelling irk-123456789-1214382017-06-15T03:04:51Z Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors. 2006 Article Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.80.Ey, 78.30.Fs http://dspace.nbuv.gov.ua/handle/123456789/121438 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors.
format Article
author Venger, E.F.
Knorozok, L.M.
Melnichuk, L.Yu.
Melnichuk, O.V.
spellingShingle Venger, E.F.
Knorozok, L.M.
Melnichuk, L.Yu.
Melnichuk, O.V.
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Venger, E.F.
Knorozok, L.M.
Melnichuk, L.Yu.
Melnichuk, O.V.
author_sort Venger, E.F.
title Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
title_short Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
title_full Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
title_fullStr Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
title_full_unstemmed Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
title_sort synthesis and properties of semiconductor solid solutions (insb)₁₋x(cdte)x
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121438
citation_txt Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:27Z
last_indexed 2023-10-18T20:39:27Z
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