Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide,...
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| Дата: | 2006 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121438 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121438 |
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irk-123456789-1214382017-06-15T03:04:51Z Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors. 2006 Article Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 72.80.Ey, 78.30.Fs http://dspace.nbuv.gov.ua/handle/123456789/121438 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and crystallization are determined. It is shown that, when doping the indium antimonide, its lattice parameter changes considerably. This leads to deformation of the electron energy spectrum, changes the bandgap and charge carrier effective mass and affects the optical and electrical properties of indium antimonide samples. As a result, such material becomes suitable for fabrication of IR photodetectors. |
| format |
Article |
| author |
Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
| spellingShingle |
Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Venger, E.F. Knorozok, L.M. Melnichuk, L.Yu. Melnichuk, O.V. |
| author_sort |
Venger, E.F. |
| title |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_short |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_full |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_fullStr |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_full_unstemmed |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x |
| title_sort |
synthesis and properties of semiconductor solid solutions (insb)₁₋x(cdte)x |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121438 |
| citation_txt |
Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x / E.F. Venger, L.M. Knorozok, L.Yu. Melnichuk, O.V. Melnichuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 80-86. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:27Z |
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