Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the ch...
Збережено в:
| Дата: | 2016 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121518 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1215182017-06-15T03:04:47Z Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation Milenin, G.V. Red’ko, R.A. Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable – time to a random event – obeys the Weibull–Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented. 2016 Article Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.01.014 PACS 61.72.Ff, 78.55.Cr, 78.60.-b http://dspace.nbuv.gov.ua/handle/123456789/121518 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable – time to a random event – obeys the Weibull–Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented. |
| format |
Article |
| author |
Milenin, G.V. Red’ko, R.A. |
| spellingShingle |
Milenin, G.V. Red’ko, R.A. Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Milenin, G.V. Red’ko, R.A. |
| author_sort |
Milenin, G.V. |
| title |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_short |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_full |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_fullStr |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_full_unstemmed |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation |
| title_sort |
physical mechanisms and models of the long-term transformations in radiative recombination observed in n-gaas under microwave irradiation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121518 |
| citation_txt |
Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 14-22. — Бібліогр.: 32 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:39:45Z |
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2023-10-18T20:39:45Z |
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