Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for...
Збережено в:
| Дата: | 2005 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121558 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case. |
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