Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice

We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2005
Автор: Abouelaoualim, D.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121558
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Цитувати:Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121558
record_format dspace
spelling irk-123456789-1215582017-06-15T03:03:08Z Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice Abouelaoualim, D. We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case. 2005 Article Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ. 1560-8034 PACS 71.20.-b, 73.21.Cd http://dspace.nbuv.gov.ua/handle/123456789/121558 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron miniband conduction of superlattice and a reformulation of the slab model for the confined LO-phonon modes has been considered. An expression for the scattering rates has been obtained. Our results show that, for transitions related to the emission of confined LO-phonon, the scattering rates are significantly increased in the band nonparabolicity case.
format Article
author Abouelaoualim, D.
spellingShingle Abouelaoualim, D.
Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Abouelaoualim, D.
author_sort Abouelaoualim, D.
title Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
title_short Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
title_full Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
title_fullStr Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
title_full_unstemmed Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice
title_sort nonparabolicity effects on electron-confined lo-phonon scattering rates in gaas-al₀.₄₅ga₀.₅₅as superlattice
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/121558
citation_txt Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice / D. Abouelaoualim // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 60-64. — Бібліогр.: 42 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT abouelaoualimd nonparabolicityeffectsonelectronconfinedlophononscatteringratesingaasal045ga055assuperlattice
first_indexed 2023-10-18T20:39:32Z
last_indexed 2023-10-18T20:39:32Z
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