ZnTe-based UV sensors
A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting ele...
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Дата: | 2016 |
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Автори: | , , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121564 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | ZnTe-based UV sensors / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Atdaiev, K.B. Krulikovska, M.S. Mazin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 197-200. — Бібліогр.: 11 назв. — англ. |
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irk-123456789-1215642018-03-21T13:01:15Z ZnTe-based UV sensors Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Sheremetova, G.I. Atdaiev, В.S. Krulikovska, K.B. Mazin, M.A. A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu₁.₈S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented. 2016 Article ZnTe-based UV sensors / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Atdaiev, K.B. Krulikovska, M.S. Mazin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 197-200. — Бібліогр.: 11 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.02.197 PACS 73.20.At, 73.40.Kp, 84.60.Jt http://dspace.nbuv.gov.ua/handle/123456789/121564 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu₁.₈S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented. |
format |
Article |
author |
Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Sheremetova, G.I. Atdaiev, В.S. Krulikovska, K.B. Mazin, M.A. |
spellingShingle |
Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Sheremetova, G.I. Atdaiev, В.S. Krulikovska, K.B. Mazin, M.A. ZnTe-based UV sensors Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Pavelets, S.Yu. Bobrenko, Yu.N. Semikina, T.V. Sheremetova, G.I. Atdaiev, В.S. Krulikovska, K.B. Mazin, M.A. |
author_sort |
Pavelets, S.Yu. |
title |
ZnTe-based UV sensors |
title_short |
ZnTe-based UV sensors |
title_full |
ZnTe-based UV sensors |
title_fullStr |
ZnTe-based UV sensors |
title_full_unstemmed |
ZnTe-based UV sensors |
title_sort |
znte-based uv sensors |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2016 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121564 |
citation_txt |
ZnTe-based UV sensors / S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, G.I. Sheremetova, В.S. Atdaiev, K.B. Krulikovska, M.S. Mazin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 197-200. — Бібліогр.: 11 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT paveletssyu zntebaseduvsensors AT bobrenkoyun zntebaseduvsensors AT semikinatv zntebaseduvsensors AT sheremetovagi zntebaseduvsensors AT atdaievvs zntebaseduvsensors AT krulikovskakb zntebaseduvsensors AT mazinma zntebaseduvsensors |
first_indexed |
2023-10-18T20:39:50Z |
last_indexed |
2023-10-18T20:39:50Z |
_version_ |
1796150788306763776 |