Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a potential well for holes and a barrier for electrons has been considered. A trial...
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| Дата: | 2016 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121566 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 208-214. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121566 |
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irk-123456789-1215662017-06-15T03:03:49Z Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells Vertsimakha, G.V. The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a potential well for holes and a barrier for electrons has been considered. A trial function taking into account the possibility to shift the most probable position of hole from the center of the structure towards interfaces for reducing the distance to electron has been proposed. The exciton transition energy and binding energy were calculated for the structure based on the ZnO one. It has been shown that the proposed trial functions can be used for wide quantum wells for which it describes an exciton state with the carriers localized near the interfaces at a distance of the order of the Bohr radius for bulk exciton. 2016 Article Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 208-214. — Бібліогр.: 24 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.02.208 PACS 73.20.-r, 73.21.Fg, 71.35.Cc http://dspace.nbuv.gov.ua/handle/123456789/121566 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a potential well for holes and a barrier for electrons has been considered. A trial function taking into account the possibility to shift the most probable position of hole from the center of the structure towards interfaces for reducing the distance to electron has been proposed. The exciton transition energy and binding energy were calculated for the structure based on the ZnO one. It has been shown that the proposed trial functions can be used for wide quantum wells for which it describes an exciton state with the carriers localized near the interfaces at a distance of the order of the Bohr radius for bulk exciton. |
| format |
Article |
| author |
Vertsimakha, G.V. |
| spellingShingle |
Vertsimakha, G.V. Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vertsimakha, G.V. |
| author_sort |
Vertsimakha, G.V. |
| title |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells |
| title_short |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells |
| title_full |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells |
| title_fullStr |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells |
| title_full_unstemmed |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells |
| title_sort |
variational approach to the calculation of the lowest wannier exciton state in wide type-ii single semiconductor quantum wells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2016 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121566 |
| citation_txt |
Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 208-214. — Бібліогр.: 24 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vertsimakhagv variationalapproachtothecalculationofthelowestwannierexcitonstateinwidetypeiisinglesemiconductorquantumwells |
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2023-10-18T20:39:50Z |
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2023-10-18T20:39:50Z |
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