Excitons and trions in spherical semiconductor quantum dots

An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Har...

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Бібліографічні деталі
Дата:2006
Автори: Kupchak, I.M., Kryuchenko, Yu.V., Korbutyak, D.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121578
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121578
record_format dspace
spelling irk-123456789-1215782017-06-15T03:04:25Z Excitons and trions in spherical semiconductor quantum dots Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects. 2006 Article Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 71.35.Pq, 71.35.-y http://dspace.nbuv.gov.ua/handle/123456789/121578 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
format Article
author Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
spellingShingle Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
Excitons and trions in spherical semiconductor quantum dots
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
author_sort Kupchak, I.M.
title Excitons and trions in spherical semiconductor quantum dots
title_short Excitons and trions in spherical semiconductor quantum dots
title_full Excitons and trions in spherical semiconductor quantum dots
title_fullStr Excitons and trions in spherical semiconductor quantum dots
title_full_unstemmed Excitons and trions in spherical semiconductor quantum dots
title_sort excitons and trions in spherical semiconductor quantum dots
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121578
citation_txt Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kupchakim excitonsandtrionsinsphericalsemiconductorquantumdots
AT kryuchenkoyuv excitonsandtrionsinsphericalsemiconductorquantumdots
AT korbutyakdv excitonsandtrionsinsphericalsemiconductorquantumdots
first_indexed 2023-10-18T20:39:34Z
last_indexed 2023-10-18T20:39:34Z
_version_ 1796150773769306112