Dynamic electrophysical characterization of porous silicon humidity sensing

• Дата: 2006
• Автори: Bravina, S., Morozovsky, N., Boukroub, R.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121597
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.

The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated.