Dynamic electrophysical characterization of porous silicon humidity sensing
The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of...
Збережено в:
| Дата: | 2006 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121597 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121597 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1215972017-06-15T03:04:48Z Dynamic electrophysical characterization of porous silicon humidity sensing Bravina, S. Morozovsky, N. Boukroub, R. The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated. 2006 Article Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 07.07.DF http://dspace.nbuv.gov.ua/handle/123456789/121597 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated. |
| format |
Article |
| author |
Bravina, S. Morozovsky, N. Boukroub, R. |
| spellingShingle |
Bravina, S. Morozovsky, N. Boukroub, R. Dynamic electrophysical characterization of porous silicon humidity sensing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bravina, S. Morozovsky, N. Boukroub, R. |
| author_sort |
Bravina, S. |
| title |
Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_short |
Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_full |
Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_fullStr |
Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_full_unstemmed |
Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_sort |
dynamic electrophysical characterization of porous silicon humidity sensing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121597 |
| citation_txt |
Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT bravinas dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing AT morozovskyn dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing AT boukroubr dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing |
| first_indexed |
2023-10-18T20:39:36Z |
| last_indexed |
2023-10-18T20:39:36Z |
| _version_ |
1796150784494141440 |