Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe
The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and a...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2006 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121609 |
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| Цитувати: | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1216092017-06-16T03:03:07Z Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe Babentsov, V.N. The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level. 2006 Article Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.55.-I, 73.22.-f http://dspace.nbuv.gov.ua/handle/123456789/121609 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level. |
| format |
Article |
| author |
Babentsov, V.N. |
| spellingShingle |
Babentsov, V.N. Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Babentsov, V.N. |
| author_sort |
Babentsov, V.N. |
| title |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_short |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_full |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_fullStr |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_full_unstemmed |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_sort |
defects with deep donor and acceptor levels in nanocrystals of cdte and cdse |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121609 |
| citation_txt |
Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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