Photoelectric properties of single crystals Ag₃In₅Se₉

Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism...

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Дата:2006
Автори: Huseynov, A.H., Mamedov, R.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121614
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216142017-06-16T03:03:28Z Photoelectric properties of single crystals Ag₃In₅Se₉ Huseynov, A.H. Mamedov, R.M. Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample. 2006 Article Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 72.40.+w http://dspace.nbuv.gov.ua/handle/123456789/121614 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample.
format Article
author Huseynov, A.H.
Mamedov, R.M.
spellingShingle Huseynov, A.H.
Mamedov, R.M.
Photoelectric properties of single crystals Ag₃In₅Se₉
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Huseynov, A.H.
Mamedov, R.M.
author_sort Huseynov, A.H.
title Photoelectric properties of single crystals Ag₃In₅Se₉
title_short Photoelectric properties of single crystals Ag₃In₅Se₉
title_full Photoelectric properties of single crystals Ag₃In₅Se₉
title_fullStr Photoelectric properties of single crystals Ag₃In₅Se₉
title_full_unstemmed Photoelectric properties of single crystals Ag₃In₅Se₉
title_sort photoelectric properties of single crystals ag₃in₅se₉
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121614
citation_txt Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT huseynovah photoelectricpropertiesofsinglecrystalsag3in5se9
AT mamedovrm photoelectricpropertiesofsinglecrystalsag3in5se9
first_indexed 2023-10-18T20:39:53Z
last_indexed 2023-10-18T20:39:53Z
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