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Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy

Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photolumin...

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Main Author: Rogozin, I.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121623
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spelling irk-123456789-1216232017-06-16T03:03:34Z Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy Rogozin, I.V. Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed. 2006 Article Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.10.Nz, 61.72.Ji, 68.37.Ps, 78.30.Fs, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/121623 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed.
format Article
author Rogozin, I.V.
spellingShingle Rogozin, I.V.
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rogozin, I.V.
author_sort Rogozin, I.V.
title Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
title_short Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
title_full Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
title_fullStr Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
title_full_unstemmed Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
title_sort growing the epitaxial undoped and n-doped zno films by radical beam gettering epitaxy
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121623
citation_txt Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT rogoziniv growingtheepitaxialundopedandndopedznofilmsbyradicalbeamgetteringepitaxy
first_indexed 2023-10-18T20:39:54Z
last_indexed 2023-10-18T20:39:54Z
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