Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photolumin...
Збережено в:
| Дата: | 2006 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121623 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121623 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1216232017-06-16T03:03:34Z Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy Rogozin, I.V. Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed. 2006 Article Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 61.10.Nz, 61.72.Ji, 68.37.Ps, 78.30.Fs, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/121623 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Epitaxial undoped and N-doped ZnO films were obtained using the method of radical beam gettering epitaxy. Structural and luminescent properties of the obtained films were researched. In both cases, there can be seen orientation of the films along c-axis. In the spectrum of low-temperature photoluminescence of N-doped ZnO films, observed was a peak 3.31 eV probably of a neutral acceptor-bound exciton NO. The nature of donor-acceptor band 3.23 eV and green band 2.56 eV was discussed. |
| format |
Article |
| author |
Rogozin, I.V. |
| spellingShingle |
Rogozin, I.V. Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rogozin, I.V. |
| author_sort |
Rogozin, I.V. |
| title |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_short |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_full |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_fullStr |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_full_unstemmed |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy |
| title_sort |
growing the epitaxial undoped and n-doped zno films by radical beam gettering epitaxy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121623 |
| citation_txt |
Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy / I.V. Rogozin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 79-82. — Бібліогр.: 27 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT rogoziniv growingtheepitaxialundopedandndopedznofilmsbyradicalbeamgetteringepitaxy |
| first_indexed |
2023-10-18T20:39:54Z |
| last_indexed |
2023-10-18T20:39:54Z |
| _version_ |
1796150791911768064 |