Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to...
Збережено в:
| Дата: | 2006 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121629 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to the change of mechanical and magnetic properties of ZnSe-GaAs solid solutions. Proposed was the healing mechanism based on inhomogeneous distribution of the magnetic susceptibility in crystal bulk and, therefore, the appearance of randomly distributed external magnetic fields. Interaction between magnetic moments results in appearance of “driving forces” promoting defect migration and their annihilation. |
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