Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions

The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Brodovoy, А.V., Veremenko, A.M., Skryshevsky, V.A., Vlasyuk, А.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121629
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121629
record_format dspace
spelling irk-123456789-1216292017-06-16T03:04:01Z Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions Brodovoy, А.V. Veremenko, A.M. Skryshevsky, V.A. Vlasyuk, А.V. The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to the change of mechanical and magnetic properties of ZnSe-GaAs solid solutions. Proposed was the healing mechanism based on inhomogeneous distribution of the magnetic susceptibility in crystal bulk and, therefore, the appearance of randomly distributed external magnetic fields. Interaction between magnetic moments results in appearance of “driving forces” promoting defect migration and their annihilation. 2006 Article Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.40.+w, 73.20.At, 75.80.+q, 81.65.Ps http://dspace.nbuv.gov.ua/handle/123456789/121629 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to the change of mechanical and magnetic properties of ZnSe-GaAs solid solutions. Proposed was the healing mechanism based on inhomogeneous distribution of the magnetic susceptibility in crystal bulk and, therefore, the appearance of randomly distributed external magnetic fields. Interaction between magnetic moments results in appearance of “driving forces” promoting defect migration and their annihilation.
format Article
author Brodovoy, А.V.
Veremenko, A.M.
Skryshevsky, V.A.
Vlasyuk, А.V.
spellingShingle Brodovoy, А.V.
Veremenko, A.M.
Skryshevsky, V.A.
Vlasyuk, А.V.
Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Brodovoy, А.V.
Veremenko, A.M.
Skryshevsky, V.A.
Vlasyuk, А.V.
author_sort Brodovoy, А.V.
title Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
title_short Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
title_full Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
title_fullStr Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
title_full_unstemmed Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
title_sort magnetic field impact on electrical properties of znse-gaas solid solutions
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121629
citation_txt Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT brodovoyav magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions
AT veremenkoam magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions
AT skryshevskyva magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions
AT vlasyukav magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions
first_indexed 2023-10-18T20:39:55Z
last_indexed 2023-10-18T20:39:55Z
_version_ 1796150792549302272