Cadmium phosphide as a new material for infrared converters
Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact generalized Kildal band model. Relationship between the absorption coefficient an...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121632 |
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| Цитувати: | Cadmium phosphide as a new material for infrared converters / D. Stepanchikov, S. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 40-44. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121632 |
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dspace |
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irk-123456789-1216322017-06-16T03:03:13Z Cadmium phosphide as a new material for infrared converters Stepanchikov, D. Shutov, S. Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact generalized Kildal band model. Relationship between the absorption coefficient and radiation temperature is presented. On the ground of our calculations, the theoretical temperature dependences of the maximum values of photovoltage and efficiency have been obtained. A common thermo-dynamical approach was applied in this case. The source of radiation was a black body. In our investigations, the barrier structure on metal-semiconductor basis with the Schottky layer has been considered. The operation temperature range for the Me–n-Cd₃P₂ converter has been found. 2006 Article Cadmium phosphide as a new material for infrared converters / D. Stepanchikov, S. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 40-44. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 71.20.-b, 71.18.+y http://dspace.nbuv.gov.ua/handle/123456789/121632 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact generalized Kildal band model. Relationship between the absorption coefficient and radiation temperature is presented. On the ground of our calculations, the theoretical temperature dependences of the maximum values of photovoltage and efficiency have been obtained. A common thermo-dynamical approach was applied in this case. The source of radiation was a black body. In our investigations, the barrier structure on metal-semiconductor basis with the Schottky layer has been considered. The operation temperature range for the Me–n-Cd₃P₂ converter has been found. |
| format |
Article |
| author |
Stepanchikov, D. Shutov, S. |
| spellingShingle |
Stepanchikov, D. Shutov, S. Cadmium phosphide as a new material for infrared converters Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Stepanchikov, D. Shutov, S. |
| author_sort |
Stepanchikov, D. |
| title |
Cadmium phosphide as a new material for infrared converters |
| title_short |
Cadmium phosphide as a new material for infrared converters |
| title_full |
Cadmium phosphide as a new material for infrared converters |
| title_fullStr |
Cadmium phosphide as a new material for infrared converters |
| title_full_unstemmed |
Cadmium phosphide as a new material for infrared converters |
| title_sort |
cadmium phosphide as a new material for infrared converters |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121632 |
| citation_txt |
Cadmium phosphide as a new material for infrared converters / D. Stepanchikov, S. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 40-44. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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