Electric properties of TlInS₂ single crystals
Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carri...
Збережено в:
| Дата: | 2006 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121640 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV. |
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