Electric properties of TlInS₂ single crystals
Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carri...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121640 |
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| Цитувати: | Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121640 |
|---|---|
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dspace |
| spelling |
irk-123456789-1216402017-06-16T03:03:38Z Electric properties of TlInS₂ single crystals Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV. 2006 Article Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 71.20.Nr; 72.20Fr; 72.20.Ht; 72.20 Jv http://dspace.nbuv.gov.ua/handle/123456789/121640 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV. |
| format |
Article |
| author |
Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. |
| spellingShingle |
Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. Electric properties of TlInS₂ single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. |
| author_sort |
Mustafaeva, S.N. |
| title |
Electric properties of TlInS₂ single crystals |
| title_short |
Electric properties of TlInS₂ single crystals |
| title_full |
Electric properties of TlInS₂ single crystals |
| title_fullStr |
Electric properties of TlInS₂ single crystals |
| title_full_unstemmed |
Electric properties of TlInS₂ single crystals |
| title_sort |
electric properties of tlins₂ single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121640 |
| citation_txt |
Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT mustafaevasn electricpropertiesoftlins2singlecrystals AT ismailovaa electricpropertiesoftlins2singlecrystals AT akhmedzadend electricpropertiesoftlins2singlecrystals |
| first_indexed |
2023-10-18T20:39:57Z |
| last_indexed |
2023-10-18T20:39:57Z |
| _version_ |
1796150793713221632 |