Modelling vacancy microvoid formation in dislocation-free silicon single crystals
An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stat...
Збережено в:
| Дата: | 2006 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121641 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121641 |
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dspace |
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irk-123456789-1216412017-06-16T03:03:27Z Modelling vacancy microvoid formation in dislocation-free silicon single crystals Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown. 2006 Article Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.72Bb, 61.72.Jj, 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/121641 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling after their growth was carried out. The possibility of formation of a quasi-stationary microvoid profile in large-scale crystals within the temperature range 1130…1070 °С has been shown. |
| format |
Article |
| author |
Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
| spellingShingle |
Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. Modelling vacancy microvoid formation in dislocation-free silicon single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Talanin, V.I. Talanin, I.E. Koryagin, S.A. Semikina, M.Yu. |
| author_sort |
Talanin, V.I. |
| title |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_short |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_full |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_fullStr |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_full_unstemmed |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| title_sort |
modelling vacancy microvoid formation in dislocation-free silicon single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121641 |
| citation_txt |
Modelling vacancy microvoid formation in dislocation-free silicon single crystals / V.I. Talanin, I.E. Talanin, S.A. Koryagin, M.Yu. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 77-81. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:57Z |
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