Surface microrelief obtained by composed target deposition for LC molecules alignment

Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of alignin...

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Бібліографічні деталі
Дата:2006
Автори: Kolomzarov, Yu., Oleksenko, P., Sorokin, V., Tytarenko, P., Zelinskyy, R.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121643
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Surface microrelief obtained by composed target deposition for LC molecules alignment / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 58-62. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216432017-06-16T03:04:04Z Surface microrelief obtained by composed target deposition for LC molecules alignment Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by CRS method for various In, Sn concentration and by the polyimide rubbing method are compared. It was shown that such aligning microrelief can create defectless and perfect at the microscopic level nematic LC oriented structures. 2006 Article Surface microrelief obtained by composed target deposition for LC molecules alignment / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 58-62. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 42.79.Kr http://dspace.nbuv.gov.ua/handle/123456789/121643 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by CRS method for various In, Sn concentration and by the polyimide rubbing method are compared. It was shown that such aligning microrelief can create defectless and perfect at the microscopic level nematic LC oriented structures.
format Article
author Kolomzarov, Yu.
Oleksenko, P.
Sorokin, V.
Tytarenko, P.
Zelinskyy, R.
spellingShingle Kolomzarov, Yu.
Oleksenko, P.
Sorokin, V.
Tytarenko, P.
Zelinskyy, R.
Surface microrelief obtained by composed target deposition for LC molecules alignment
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kolomzarov, Yu.
Oleksenko, P.
Sorokin, V.
Tytarenko, P.
Zelinskyy, R.
author_sort Kolomzarov, Yu.
title Surface microrelief obtained by composed target deposition for LC molecules alignment
title_short Surface microrelief obtained by composed target deposition for LC molecules alignment
title_full Surface microrelief obtained by composed target deposition for LC molecules alignment
title_fullStr Surface microrelief obtained by composed target deposition for LC molecules alignment
title_full_unstemmed Surface microrelief obtained by composed target deposition for LC molecules alignment
title_sort surface microrelief obtained by composed target deposition for lc molecules alignment
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121643
citation_txt Surface microrelief obtained by composed target deposition for LC molecules alignment / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 58-62. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kolomzarovyu surfacemicroreliefobtainedbycomposedtargetdepositionforlcmoleculesalignment
AT oleksenkop surfacemicroreliefobtainedbycomposedtargetdepositionforlcmoleculesalignment
AT sorokinv surfacemicroreliefobtainedbycomposedtargetdepositionforlcmoleculesalignment
AT tytarenkop surfacemicroreliefobtainedbycomposedtargetdepositionforlcmoleculesalignment
AT zelinskyyr surfacemicroreliefobtainedbycomposedtargetdepositionforlcmoleculesalignment
first_indexed 2023-10-18T20:39:57Z
last_indexed 2023-10-18T20:39:57Z
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