Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system

Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presen...

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Дата:2005
Автори: P.P., Moskvin, L.V., Rashkovetskiy, A.V., Stronski
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121650
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system / Moskvin P.P., Rashkovetskiy L.V., Stronski A.V. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 81-85. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216502017-06-16T03:03:15Z Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system P.P., Moskvin L.V., Rashkovetskiy A.V., Stronski Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presence in the liquid phase of the ATe, A₂Te₃, ATe₂, A₂Te (A = Cd, Hg) and free Te, Cd, Hg atoms. In accordance with the model of polyassociative solutions the data on p–T–x equilibrium in the region of quasi-binary cross-section of Cd-Hg-Te system structural diagram were obtained. It was shown, that the mixing effects in the three-component liquid phase are satisfactorily described by the formation of CdHgTe and CdHgTe₃ associates. The good correspondence of the calculations and experiment in the high temperature part of the Cd-Hg-Te system structural diagram was achieved. 2005 Article Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system / Moskvin P.P., Rashkovetskiy L.V., Stronski A.V. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 81-85. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 64.90.+b http://dspace.nbuv.gov.ua/handle/123456789/121650 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical properties of the studied systems can be described in the supposition of the presence in the liquid phase of the ATe, A₂Te₃, ATe₂, A₂Te (A = Cd, Hg) and free Te, Cd, Hg atoms. In accordance with the model of polyassociative solutions the data on p–T–x equilibrium in the region of quasi-binary cross-section of Cd-Hg-Te system structural diagram were obtained. It was shown, that the mixing effects in the three-component liquid phase are satisfactorily described by the formation of CdHgTe and CdHgTe₃ associates. The good correspondence of the calculations and experiment in the high temperature part of the Cd-Hg-Te system structural diagram was achieved.
format Article
author P.P., Moskvin
L.V., Rashkovetskiy
A.V., Stronski
spellingShingle P.P., Moskvin
L.V., Rashkovetskiy
A.V., Stronski
Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet P.P., Moskvin
L.V., Rashkovetskiy
A.V., Stronski
author_sort P.P., Moskvin
title Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
title_short Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
title_full Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
title_fullStr Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
title_full_unstemmed Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system
title_sort polyassociative thermodynamical model of a²b⁶ semiconductor melt and phase equilibrium in cd-hg-te system: 3. optimization of the thermodynamical functions of the model and quasi-binary structural diagram of cd-hg-te system
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/121650
citation_txt Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system / Moskvin P.P., Rashkovetskiy L.V., Stronski A.V. // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 81-85. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT lvrashkovetskiy polyassociativethermodynamicalmodelofa2b6semiconductormeltandphaseequilibriumincdhgtesystem3optimizationofthethermodynamicalfunctionsofthemodelandquasibinarystructuraldiagramofcdhgtesystem
AT avstronski polyassociativethermodynamicalmodelofa2b6semiconductormeltandphaseequilibriumincdhgtesystem3optimizationofthethermodynamicalfunctionsofthemodelandquasibinarystructuraldiagramofcdhgtesystem
first_indexed 2023-10-18T20:39:58Z
last_indexed 2023-10-18T20:39:58Z
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