The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes

The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes

By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the...

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Бібліографічні деталі
Дата:2016
Автори: Sachenko, A.V., Kostylyov, V.P., Vlasiuk, V.M., Sokolovskyi, I.O., Evstigneev, M.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121653
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1216532017-06-16T03:02:33Z The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes Sachenko, A.V. Kostylyov, V.P. Vlasiuk, V.M. Sokolovskyi, I.O. Evstigneev, M.A. By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 10¹⁶ cm⁻³. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells has been analyzed. It has been shown that the shorter the Shockley–Read–Hall lifetime, τSHR, the stronger its effect. In particular, for τSHR = 100 μs, this recombination channel leads to the reduction of the photoconversion efficiency by 5.5%. 2016 Article The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.04.334 PACS 72.20.J, 78.60.J http://dspace.nbuv.gov.ua/handle/123456789/121653 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when Shockley–Read–Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 10¹⁶ cm⁻³. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells has been analyzed. It has been shown that the shorter the Shockley–Read–Hall lifetime, τSHR, the stronger its effect. In particular, for τSHR = 100 μs, this recombination channel leads to the reduction of the photoconversion efficiency by 5.5%.
format Article
author Sachenko, A.V.
Kostylyov, V.P.
Vlasiuk, V.M.
Sokolovskyi, I.O.
Evstigneev, M.A.
spellingShingle Sachenko, A.V.
Kostylyov, V.P.
Vlasiuk, V.M.
Sokolovskyi, I.O.
Evstigneev, M.A.
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sachenko, A.V.
Kostylyov, V.P.
Vlasiuk, V.M.
Sokolovskyi, I.O.
Evstigneev, M.A.
author_sort Sachenko, A.V.
title The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
title_short The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
title_full The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
title_fullStr The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
title_full_unstemmed The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes
title_sort influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. long shockley–read–hall lifetimes
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2016
url http://dspace.nbuv.gov.ua/handle/123456789/121653
citation_txt The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes / A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M.A. Evstigneev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 334-342. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:59Z
last_indexed 2023-10-18T20:39:59Z
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