Dependence of the collision integral on electric field
Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity.
Збережено в:
| Дата: | 2015 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121805 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121805 |
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| record_format |
dspace |
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irk-123456789-1218052017-06-19T03:03:23Z Dependence of the collision integral on electric field Boiko, I.I. Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. 2015 Article Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.138 PACS 72.10-d, 72.20-i http://dspace.nbuv.gov.ua/handle/123456789/121805 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. |
| format |
Article |
| author |
Boiko, I.I. |
| spellingShingle |
Boiko, I.I. Dependence of the collision integral on electric field Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Boiko, I.I. |
| author_sort |
Boiko, I.I. |
| title |
Dependence of the collision integral on electric field |
| title_short |
Dependence of the collision integral on electric field |
| title_full |
Dependence of the collision integral on electric field |
| title_fullStr |
Dependence of the collision integral on electric field |
| title_full_unstemmed |
Dependence of the collision integral on electric field |
| title_sort |
dependence of the collision integral on electric field |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121805 |
| citation_txt |
Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 138-143. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT boikoii dependenceofthecollisionintegralonelectricfield |
| first_indexed |
2023-10-18T20:40:22Z |
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2023-10-18T20:40:22Z |
| _version_ |
1796150811272675328 |