Radiation-stimulated processes in silicon structures with contacts based on TiN
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, t...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2015 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121819 |
| Теги: |
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| Цитувати: | Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121819 |
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dspace |
| spelling |
irk-123456789-1218192017-06-19T03:03:18Z Radiation-stimulated processes in silicon structures with contacts based on TiN Nasyrov, M.U. Ataubaeva, A.B. The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. 2015 Article Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.220 PACS 61.80.-x http://dspace.nbuv.gov.ua/handle/123456789/121819 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. |
| format |
Article |
| author |
Nasyrov, M.U. Ataubaeva, A.B. |
| spellingShingle |
Nasyrov, M.U. Ataubaeva, A.B. Radiation-stimulated processes in silicon structures with contacts based on TiN Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nasyrov, M.U. Ataubaeva, A.B. |
| author_sort |
Nasyrov, M.U. |
| title |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_short |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_fullStr |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full_unstemmed |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_sort |
radiation-stimulated processes in silicon structures with contacts based on tin |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121819 |
| citation_txt |
Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT nasyrovmu radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin AT ataubaevaab radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin |
| first_indexed |
2023-10-18T20:40:24Z |
| last_indexed |
2023-10-18T20:40:24Z |
| _version_ |
1796150817084932096 |