Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as i...
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| Дата: | 2005 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121862 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121862 |
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| record_format |
dspace |
| spelling |
irk-123456789-1218622017-06-20T03:02:24Z Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors. 2005 Article Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.72y, 81.05, Dz; 81.10.Bk http://dspace.nbuv.gov.ua/handle/123456789/121862 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe
single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size)
with natural faceting were grown by vapor transport in silica ampoules with a special
shape using a polycrystalline ingot as initial source material. It is shown that
minimization of plastic deformation effect in preparation of the most structurally
perfect crystals is possible by a way of heat removal from the crystallization front by
radiation. The growth of high-resistive material required careful preparation of the
initial charge with close to stoichiometric composition. The obtained crystals were
successfully tested for creating the room temperature X-ray and gamma-ray detectors. |
| format |
Article |
| author |
Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. |
| spellingShingle |
Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Feychuk, P. Kopyl, O. Pavlovich, I. Shcherbak, L. |
| author_sort |
Feychuk, P. |
| title |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_short |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_full |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_fullStr |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_full_unstemmed |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase |
| title_sort |
growing the high-resistive cd₁₋xznxte single crystals from a vapor phase |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121862 |
| citation_txt |
Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase / P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 110-113. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:40:30Z |
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