Covalent-bonded graphyne polymers with high hardness

Eight covalent-bonded graphyne polymers have been proposed using the newly developed USPEX and CALYPSO methods based on the first principle calculations. These polymers are energetically more favorable than the corresponding graphyne under ambient pressure, and seven of them are more stable than ful...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2014
Автори: Hu, M., He, J., Wang, Q., Huang, Q., Yu, D., Tian, Y., Xu, B.
Формат: Стаття
Мова:English
Опубліковано: Інститут надтвердих матеріалів ім. В.М. Бакуля НАН України 2014
Назва видання:Сверхтвердые материалы
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/126120
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Covalent-bonded graphyne polymers with high hardness / M. Hu, J. He, Q. Wang, Q. Huang, D. Yu, Y. Tian, B. Xu // Сверхтвердые материалы. — 2014. — № 4. — С. 53-67. — Бібліогр.: 47 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Eight covalent-bonded graphyne polymers have been proposed using the newly developed USPEX and CALYPSO methods based on the first principle calculations. These polymers are energetically more favorable than the corresponding graphyne under ambient pressure, and seven of them are more stable than fullerene C₆₀, indicating their existence possibilities. The mechanical and dynamic stabilities of these crystal structures have been confirmed by calculating their elastic constants and phonon dispersion curves, respectively. The newly developed variable-cell nudged elastic band (VC-NEV) simulations show that the graphyne → polymer transformation exhibits lower energy barrier than the graphite → diamond transformation. Two of the graphyne polymers have been found to be superhard, and the others are hard materials. These graphyne polymers possess tunable electronic properties from metallic to semiconductive.