Low temperature electron transport on semiconductor surfaces
The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of...
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| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2003
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/128815 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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dspace |
| spelling |
irk-123456789-1288152018-01-15T03:02:50Z Low temperature electron transport on semiconductor surfaces Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. Electronically Induced Phenomena: Low Temperature Aspects The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. 2003 Article Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/128815 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Electronically Induced Phenomena: Low Temperature Aspects Electronically Induced Phenomena: Low Temperature Aspects |
| spellingShingle |
Electronically Induced Phenomena: Low Temperature Aspects Electronically Induced Phenomena: Low Temperature Aspects Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. Low temperature electron transport on semiconductor surfaces Физика низких температур |
| description |
The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. |
| format |
Article |
| author |
Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. |
| author_facet |
Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. |
| author_sort |
Lastapis, M. |
| title |
Low temperature electron transport on semiconductor surfaces |
| title_short |
Low temperature electron transport on semiconductor surfaces |
| title_full |
Low temperature electron transport on semiconductor surfaces |
| title_fullStr |
Low temperature electron transport on semiconductor surfaces |
| title_full_unstemmed |
Low temperature electron transport on semiconductor surfaces |
| title_sort |
low temperature electron transport on semiconductor surfaces |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2003 |
| topic_facet |
Electronically Induced Phenomena: Low Temperature Aspects |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/128815 |
| citation_txt |
Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT lastapism lowtemperatureelectrontransportonsemiconductorsurfaces AT riedeld lowtemperatureelectrontransportonsemiconductorsurfaces AT maynea lowtemperatureelectrontransportonsemiconductorsurfaces AT bobrovk lowtemperatureelectrontransportonsemiconductorsurfaces AT dujarding lowtemperatureelectrontransportonsemiconductorsurfaces |
| first_indexed |
2023-10-18T20:56:11Z |
| last_indexed |
2023-10-18T20:56:11Z |
| _version_ |
1796151495774699520 |