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Low temperature electron transport on semiconductor surfaces

Low temperature electron transport on semiconductor surfaces

The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of...

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Main Authors: Lastapis, M., Riedel, D., Mayne, A., Bobrov, K., Dujardin, G.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2003
Series:Физика низких температур
Subjects:
Electronically Induced Phenomena: Low Temperature Aspects
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/128815
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spelling irk-123456789-1288152018-01-15T03:02:50Z Low temperature electron transport on semiconductor surfaces Lastapis, M. Riedel, D. Mayne, A. Bobrov, K. Dujardin, G. Electronically Induced Phenomena: Low Temperature Aspects The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. 2003 Article Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ. 0132-6414 PACS: 72.20.Jv http://dspace.nbuv.gov.ua/handle/123456789/128815 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Electronically Induced Phenomena: Low Temperature Aspects
Electronically Induced Phenomena: Low Temperature Aspects
spellingShingle Electronically Induced Phenomena: Low Temperature Aspects
Electronically Induced Phenomena: Low Temperature Aspects
Lastapis, M.
Riedel, D.
Mayne, A.
Bobrov, K.
Dujardin, G.
Low temperature electron transport on semiconductor surfaces
Физика низких температур
description The low temperature electron transport on semiconductor surfaces has been studied using an ultra high vacuum, variable temperature Scanning Tunneling Microscope (STM). The STM I(V) spectroscopy recorded at various temperatures has enabled to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the higly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K.
format Article
author Lastapis, M.
Riedel, D.
Mayne, A.
Bobrov, K.
Dujardin, G.
author_facet Lastapis, M.
Riedel, D.
Mayne, A.
Bobrov, K.
Dujardin, G.
author_sort Lastapis, M.
title Low temperature electron transport on semiconductor surfaces
title_short Low temperature electron transport on semiconductor surfaces
title_full Low temperature electron transport on semiconductor surfaces
title_fullStr Low temperature electron transport on semiconductor surfaces
title_full_unstemmed Low temperature electron transport on semiconductor surfaces
title_sort low temperature electron transport on semiconductor surfaces
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2003
topic_facet Electronically Induced Phenomena: Low Temperature Aspects
url http://dspace.nbuv.gov.ua/handle/123456789/128815
citation_txt Low temperature electron transport on semiconductor surfaces / M. Lastapis, D. Riedel, A. Mayne, K. Bobrov, G. Dujardin // Физика низких температур. — 2003. — Т. 29, № 3. — С. 263-269. — Бібліогр.: 9 назв. — англ.
series Физика низких температур
work_keys_str_mv AT lastapism lowtemperatureelectrontransportonsemiconductorsurfaces
AT riedeld lowtemperatureelectrontransportonsemiconductorsurfaces
AT maynea lowtemperatureelectrontransportonsemiconductorsurfaces
AT bobrovk lowtemperatureelectrontransportonsemiconductorsurfaces
AT dujarding lowtemperatureelectrontransportonsemiconductorsurfaces
first_indexed 2023-10-18T20:56:11Z
last_indexed 2023-10-18T20:56:11Z
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