Activation spectroscopy of electronically induced defects in solid Ne

• Дата: 2003
• Автори: Grigorashchenko, O.N., Rudenkov, V.V., Khizhnyi, I.V., Savchenko, E.V., Frankowski, M., Smith-Gicklhorn, A.M., Beyer, M.K., Bondybey, V.E.
• Формат: Стаття
• Мова: English
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2003
• Назва видання: Физика низких температур
• Теми: Spectroscopy in Cryocrystals and Matrices
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/128944
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Activation spectroscopy of electronically induced defects in solid Ne / O.N. Grigorashchenko, V.V. Rudenkov, I.V. Khizhnyi, E.V. Savchenko, M. Frankowski, A.M. Smith-Gicklhorn, M.K. Beyer, V.E. Bondybey // Физика низких температур. — 2003. — Т. 29, № 9-10. — С. 1147-1151. — Бібліогр.: 20 назв. — англ.

Thermally stimulated luminescence (TSL) and thermally stimulated exoelectron emission (TSEE) methods were used in combination with cathodoluminescence to probe electronically induced defects in solid Ne. The defects were generated by a low energy electron beam. For spectroscopic study we used Ar* centers in Ne matrix as a model system. At a temperature of 10.5 K a sharp decrease in the intensity of "defect" components in the luminescence spectrum was observed. From the analysis of the corresponding peak in the TSL and TSEE yields the trap depth energy was estimated and compared with available theoretical calculations. The obtained data support the model suggested by Song, that stable electronically induced defects have the configuration of second-neighbour Frenkel pairs.