Negative magnetoresistance in indium antimonide whiskers doped with tin
Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the...
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| Дата: | 2016 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2016
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/129135 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-129135 |
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irk-123456789-1291352018-01-17T03:04:02Z Negative magnetoresistance in indium antimonide whiskers doped with tin Druzhinin, A. Ostrovskii, I. Khoverko, Yu. Liakh-Kaguy, N. Низкотемпеpатуpный магнетизм Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal–insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer. 2016 Article Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ. 0132-6414 PACS: 76.60.–k, 72.15.Rn, 73.43.Qt http://dspace.nbuv.gov.ua/handle/123456789/129135 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Низкотемпеpатуpный магнетизм Низкотемпеpатуpный магнетизм |
| spellingShingle |
Низкотемпеpатуpный магнетизм Низкотемпеpатуpный магнетизм Druzhinin, A. Ostrovskii, I. Khoverko, Yu. Liakh-Kaguy, N. Negative magnetoresistance in indium antimonide whiskers doped with tin Физика низких температур |
| description |
Negative magnetoresistance of InSb whiskers with different impurity concentrations 4.4 × 10 ¹⁶–7.16 × 10 ¹⁷ cm −³ was studied in longitudinal magnetic field 0–14 T in the temperature range 4.2–77 K. The negative magnetoresistance reaches about 50% for InSb whiskers with impurity concentration in the vicinity to the metal–insulator transition. The negative magnetoresistance decreases to 35 and 25% for crystals with Sn concentration from the metal and dielectric side of the transition. The longitudinal magnetoresistance twice crosses the axis of the magnetic field induction for the lightly doped crystals. The behavior of the negative magnetoresistance could be explained by the existence of classical size effect, in particular boundary scattering in the subsurface whisker layer. |
| format |
Article |
| author |
Druzhinin, A. Ostrovskii, I. Khoverko, Yu. Liakh-Kaguy, N. |
| author_facet |
Druzhinin, A. Ostrovskii, I. Khoverko, Yu. Liakh-Kaguy, N. |
| author_sort |
Druzhinin, A. |
| title |
Negative magnetoresistance in indium antimonide whiskers doped with tin |
| title_short |
Negative magnetoresistance in indium antimonide whiskers doped with tin |
| title_full |
Negative magnetoresistance in indium antimonide whiskers doped with tin |
| title_fullStr |
Negative magnetoresistance in indium antimonide whiskers doped with tin |
| title_full_unstemmed |
Negative magnetoresistance in indium antimonide whiskers doped with tin |
| title_sort |
negative magnetoresistance in indium antimonide whiskers doped with tin |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2016 |
| topic_facet |
Низкотемпеpатуpный магнетизм |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/129135 |
| citation_txt |
Negative magnetoresistance in indium antimonide whiskers doped with tin / A. Druzhinin, I. Ostrovskii, Yu. Khoverko, N. Liakh-Kaguy // Физика низких температур. — 2016. — Т. 42, № 6. — С. 581-585. — Бібліогр.: 25 назв. — англ. |
| series |
Физика низких температур |
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2023-10-18T20:56:58Z |
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2023-10-18T20:56:58Z |
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