The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the...
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| Дата: | 2016 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2016
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| Назва видання: | Физика низких температур |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/129293 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-129293 |
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dspace |
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irk-123456789-1292932018-01-19T03:03:50Z The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. Низкотемпеpатуpный магнетизм This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite. 2016 Article The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. 0132-6414 PACS: 75.47.Lx, PACS: 75.47.Gk, 72.80.Tm http://dspace.nbuv.gov.ua/handle/123456789/129293 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Низкотемпеpатуpный магнетизм Низкотемпеpатуpный магнетизм |
| spellingShingle |
Низкотемпеpатуpный магнетизм Низкотемпеpатуpный магнетизм Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system Физика низких температур |
| description |
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite. |
| format |
Article |
| author |
Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| author_facet |
Ahmed, A.M. Abd El-Mo’ez A. Mohamed Mohamed, H.F. Diab, A.K. Mohamed, Aml M. Mazen, A.E.A. |
| author_sort |
Ahmed, A.M. |
| title |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_short |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_fullStr |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_full_unstemmed |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| title_sort |
annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2016 |
| topic_facet |
Низкотемпеpатуpный магнетизм |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/129293 |
| citation_txt |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
| series |
Физика низких температур |
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