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Two-instanton approximation to the Coulomb blockade problem

We develop the two-instanton approximation to the current-voltage characteristic of a single electron transistor within the Ambegaokar-Eckern-Schon model. We determine the temperature and gate voltage dependence of the Coulomb blockade oscillations of the conductance and the effective charge. We fin...

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Main Author: Burmistrov, I.S.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2017
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/129358
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spelling irk-123456789-1293582018-01-20T03:03:17Z Two-instanton approximation to the Coulomb blockade problem Burmistrov, I.S. К 100-летию со дня рождения И.М. Лифшица We develop the two-instanton approximation to the current-voltage characteristic of a single electron transistor within the Ambegaokar-Eckern-Schon model. We determine the temperature and gate voltage dependence of the Coulomb blockade oscillations of the conductance and the effective charge. We find that a small (in comparison with the charging energy) bias voltage leads to significant suppression of the Coulomb blockade oscillations and to appearance of the bias-dependent phase shift. 2017 Article Two-instanton approximation to the Coulomb blockade problem / I.S. Burmistrov // Физика низких температур. — 2017. — Т. 43, № 1. — С. 115-121. — Бібліогр.: 28 назв. — англ. 0132-6414 PACS: 73.23.Hk, 73.43.–f, 73.43.Nq http://dspace.nbuv.gov.ua/handle/123456789/129358 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic К 100-летию со дня рождения И.М. Лифшица
К 100-летию со дня рождения И.М. Лифшица
spellingShingle К 100-летию со дня рождения И.М. Лифшица
К 100-летию со дня рождения И.М. Лифшица
Burmistrov, I.S.
Two-instanton approximation to the Coulomb blockade problem
Физика низких температур
description We develop the two-instanton approximation to the current-voltage characteristic of a single electron transistor within the Ambegaokar-Eckern-Schon model. We determine the temperature and gate voltage dependence of the Coulomb blockade oscillations of the conductance and the effective charge. We find that a small (in comparison with the charging energy) bias voltage leads to significant suppression of the Coulomb blockade oscillations and to appearance of the bias-dependent phase shift.
format Article
author Burmistrov, I.S.
author_facet Burmistrov, I.S.
author_sort Burmistrov, I.S.
title Two-instanton approximation to the Coulomb blockade problem
title_short Two-instanton approximation to the Coulomb blockade problem
title_full Two-instanton approximation to the Coulomb blockade problem
title_fullStr Two-instanton approximation to the Coulomb blockade problem
title_full_unstemmed Two-instanton approximation to the Coulomb blockade problem
title_sort two-instanton approximation to the coulomb blockade problem
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2017
topic_facet К 100-летию со дня рождения И.М. Лифшица
url http://dspace.nbuv.gov.ua/handle/123456789/129358
citation_txt Two-instanton approximation to the Coulomb blockade problem / I.S. Burmistrov // Физика низких температур. — 2017. — Т. 43, № 1. — С. 115-121. — Бібліогр.: 28 назв. — англ.
series Физика низких температур
work_keys_str_mv AT burmistrovis twoinstantonapproximationtothecoulombblockadeproblem
first_indexed 2023-10-18T20:57:33Z
last_indexed 2023-10-18T20:57:33Z
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