Spintronic devices based on magnetic nanostructures
Two types of spintronic devices on the basis of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO₂(Co) on GaAs substrate, magnetic sensors and magnetically operated field-effect transistor, were studied. Action of magnetic sensors is based on the injection magnet...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134034 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Spintronic devices based on magnetic nanostructures / L.V. Lutsev, A.I. Stognij, N.N. Novitskii, A.S. Shulenkov // Functional Materials. — 2012. — Т. 19, № 1. — С. 33-37. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Two types of spintronic devices on the basis of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO₂(Co) on GaAs substrate, magnetic sensors and magnetically operated field-effect transistor, were studied. Action of magnetic sensors is based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO₂(Co)/GaAs interface. Field-effect transistor contains SiO₂(Co) heterostructure under gate. It was found that the magnetic field action leads to significant changes in electron mobility in the channel due to interaction between spins of Co nanoparticles and electron spins. |
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