Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere

The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of...

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Бібліографічні деталі
Дата:2006
Автори: Dan`ko, A.Ya., Nizhankovsky, S.V., Kanischev, V.N., Sidelnikova, N.S., Adonkin, G.T., Puzikov, V.M., Grin, L.A.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2006
Назва видання:Functional Materials
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/134176
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1341762018-06-13T03:04:52Z Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere Dan`ko, A.Ya. Nizhankovsky, S.V. Kanischev, V.N. Sidelnikova, N.S. Adonkin, G.T. Puzikov, V.M. Grin, L.A. The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications. 2006 Article Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/134176 en Functional Materials НТК «Інститут монокристалів» НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The gas environment process formation in the furnace for sapphire growth by horizontal directional crystalliztion equipped by a graphite heating assembly has been studied during the evacuation and the inert gas (Ar, He) bleeding. The effect of the furnace blowing by the inert gas on concentration of reducing components (CO, H₂) and on optical properties of sapphire crystals grown in He atmosphere at 1 to 50 Torr pressure has been studied. The critical concentrations of the reducing components in the protective environment have benn determined for growing of sapphire intended for standart optical and optoelectronic applications.
format Article
author Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
spellingShingle Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
Functional Materials
author_facet Dan`ko, A.Ya.
Nizhankovsky, S.V.
Kanischev, V.N.
Sidelnikova, N.S.
Adonkin, G.T.
Puzikov, V.M.
Grin, L.A.
author_sort Dan`ko, A.Ya.
title Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_short Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_full Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_fullStr Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_full_unstemmed Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere
title_sort growing of sapphire for optics and optoelectronics by the hdc method in a protective atmosphere
publisher НТК «Інститут монокристалів» НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/134176
citation_txt Growing of sapphire for optics and optoelectronics by the HDC method in a protective atmosphere / A.Ya.Dan`ko, S.V. Nizhankovsky, V.N. Kanischev, N.S. Sidelnikova, G.T. Adonkin, V.M. Puzikov, L.A. Grin // Functional Materials. — 2006. — Т. 13, № 3. — С. 426-431. — Бібліогр.: 9 назв. — англ.
series Functional Materials
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first_indexed 2023-10-18T21:07:34Z
last_indexed 2023-10-18T21:07:34Z
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