Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current
We have investigated a relation between the impurity concentration and the leakage current for three types of InSb diodes. They were fabricated with different impurity concentrations on both sides of the junction such as p - n, p^+ - n; and p^+ - n+ in order to achieve the minimal level of noise. It...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Відділення фізики і астрономії НАН України
2010
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| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/13432 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current / M. Moradi, M. Daraee, M. Hajian, M.A. Forghani, M. Rastgoo, A.O. Alipour // Укр. фіз. журн. — 2010. — Т. 55, № 4. — С. 422-425. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We have investigated a relation between the impurity concentration and the leakage current for three types of InSb diodes. They were fabricated with different impurity concentrations on both sides of the junction such as p - n, p^+ - n; and p^+ - n+ in order to achieve the minimal level of noise. It is shown that the leakage current at a low reverse bias has a minimum for the p^+ - n diode structure (impurity concentration of order of 2х10^15 cm^-3 for the n-type and 1х10^18 cm^-3 for the p-type). Increasing the impurity beyond these values may cause the tunneling at a low reverse bias voltage close to zero, and decreasing the impurity causes increasing the diffusion current. |
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