On transition criterion from flat crystallization front in binary melt to cellular one
The impurity diffusion problem in a melt solidifying at a constant speed has been solved taking into account the surface energy of phase interface under linear approximation in deviation amplitude from the flat crystallization front. It has been shown that the transition criterion from flat crystall...
Збережено в:
Видавець: | НТК «Інститут монокристалів» НАН України |
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Дата: | 2004 |
Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
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Назва видання: | Functional Materials |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134422 |
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Цитувати: | On transition criterion from flat crystallization front in binary melt to cellular one / V.N. Kanischev // Functional Materials. — 2004. — Т. 11, № 1. — С. 22-25. — Бібліогр.: 7 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of UkraineРезюме: | The impurity diffusion problem in a melt solidifying at a constant speed has been solved taking into account the surface energy of phase interface under linear approximation in deviation amplitude from the flat crystallization front. It has been shown that the transition criterion from flat crystallization front to cellular one can be obtained from t hat solution. A clear evidence has been obtained that the concentration overcooling of the melt is not a sufficient condition of the growth cell formation. |
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