Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices
A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tun...
Збережено в:
| Дата: | 1999 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
1999
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134704 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-134704 |
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dspace |
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irk-123456789-1347042018-06-15T03:09:05Z Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. Электpонные свойства металлов и сплавов A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tunneling through a semiconductor layer depends sharply on the electron incidence angle. The oscillations have been found to exist even in disordered systems, provided the electrons in metal layers undergo low-angle scattering on imperfections. 1999 Article Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. 0132-6414 http://dspace.nbuv.gov.ua/handle/123456789/134704 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Электpонные свойства металлов и сплавов Электpонные свойства металлов и сплавов |
| spellingShingle |
Электpонные свойства металлов и сплавов Электpонные свойства металлов и сплавов Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices Физика низких температур |
| description |
A new type of quantum size effect in metal-semiconductor superlattices is predicted. Giant oscillations of the transverse tunnel conductivity arise if size quantization of the electron spectrum in the metal layers takes place. This effect is due to the fact that the probability of metal electron tunneling through a semiconductor layer depends sharply on the electron incidence angle. The oscillations have been found to exist even in disordered systems, provided the electrons in metal layers undergo low-angle scattering on imperfections. |
| format |
Article |
| author |
Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. |
| author_facet |
Fogel, N.Ya. Shekhter, R.I. Slutskin, A.A. Kovtun, H.A. |
| author_sort |
Fogel, N.Ya. |
| title |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_short |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_full |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_fullStr |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_full_unstemmed |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| title_sort |
quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
1999 |
| topic_facet |
Электpонные свойства металлов и сплавов |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/134704 |
| citation_txt |
Quantum size effect and interlayer electron tunneling in metal-semiconductor superlattices / N.Ya. Fogel, R.I. Shekhter, A.A. Slutskin, H.A. Kovtun // Физика низких температур. — 1999. — Т. 25, № 2. — С. 168-171. — Бібліогр.: 8 назв. — англ. |
| series |
Физика низких температур |
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2023-10-18T21:09:47Z |
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