Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation
On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2005 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/134780 |
| Теги: |
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| Цитувати: | Analysis of the secondary breakdown of semiconductor materials on the basis of the nonlinear thermal conductivity equation / N.V. Andreyeva, Yu.P. Virchenko // Functional Materials. — 2005. — Т. 12, № 2. — С. 190-195. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | On the basis of the Wagner approach in the theory of thermal breakdown of dielectrics, the analogous phenomenon in semiconductor films is analyzed. It is done without account of the stabilization effect connected with an external resistance. Formulas giving values of the fused channel diameters and the breakdown time are obtained. |
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