On luminescence kinetics of scintillators used in X-ray introscopy systems

• Datum: 2004
• Hauptverfasser: Ryzhikov, V., Starzhinskiy, N., Seminozhenko, V., Grinyov, B., Nagornaya, L., Spasov, V., Katrunov, K., Zenya, I., Vyagin, O.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2004
• Schriftenreihe: Functional Materials
• Online Zugang: http://dspace.nbuv.gov.ua/handle/123456789/134889
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: On luminescence kinetics of scintillators used in X-ray introscopy systems / V. Ryzhikov, N. Starzhinskiy, V. Seminozhenko, B. Grinyov, L. Nagornaya, V. Spasov, K. Katrunov, I. Zenya, O. Vyagin // Functional Materials. — 2004. — Т. 11, № 1. — С. 61-66. — Бібліогр.: 8 назв. — англ.

Data are presented on the influence of various factors upon luminescence kinetics of scintillator crystals based on activated ZnSe, Csl, CWO and GSO. It is shown that the isovalent dopant type substantially affects the decay times т and afterglow level of ZnSe-based scintillators, and the value of т, depending upon the dopant concentration, can vary from 1 to 150 ps. It has been determined that scintillation kinetics of ZnSe(Te) crystals has peculiar features, being characterized by a non-monotonous decrease with a region of rising luminescence intensity at the initial stage after stopping the irradiat ion of samples. Mechanism of energy transfer has been considered for this case. Decay times of oxide scintillators (CWO, GSO) is essentially dependent both on non-stoichiometry of their composition and on the presence of admixtures. It has been shown that the afterglow level of Csl- and CWO-based scintillators depends both on the dose of preliminary X-ray irradiation and on the density of defects introduced into the crystal mechanically. The ro le of X-ray irradiation and finishing thermal treatment has been considered for optimizati on of luminescence kinetics properties of scintillation elements.