Investigation of scintillation characteristics for CsI:TI and Nal:TI crystals under different surface treatment conditions

• Дата: 2006
• Автори: Andryushchenko, L.A., Boyarintsev, A.Yu., Grinyov, B.V., Kilimchuk, I.V., Kudin, A.M., Tarasov, V.A., Vyday, Yu.T.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2006
• Назва видання: Functional Materials
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/135015
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Investigation of scintillation characteristics for CsI:TI and Nal:TI crystals under different surface treatment conditions / L.A. Andryushchenko, A.Yu. Boyarintsev, B.V. Grinyov, I.V. Kilimchuk, A.M. Kudin, V.A. Tarasov, Yu.T. Vyday // Functional Materials. — 2006. — Т. 13, № 3. — С. 534-537. — Бібліогр.: 10 назв. — англ.

The influence of mechanical and chemical methods of CsI:TI and Nal:TI crystals surface treatment on their scintillation characteristics at registration of short-range ionizing radiation has been investigated. It is shown that application of ultrathin silicon dioxide powder obtained by sol-gel method and organosilicon liquids at the polishing stage provides the near-surface layer of CsI:TI and NaI:TI crystals with minimum light yield nonuniformity. After grinding of the crystal surface, the stability of scintillation characteristics can be achieved by the surface treatment with tetraethoxy silane and oligo-(siloxane hydride) liquid. Application of thin-film organosilicon coating on the CsI:TI crystal surface turned to the radiation source has improved the pulse-height resolution by 3-5 % in the absolute value at registration of X-ray radiation with E = 5.9 keV.