Radiological characterization of metal oxide semiconductor field effect transistor dosimeter
This paper reports our effort to develop a detailed 3D Monte Carlo simulation model of the High-Sensitivity MOSFET dosimeter using the MCNP 4C code for radiological charac -terization. To determine the dosimeter response accurately, this study has taken three actions: (1) The absorbed dose to the se...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
|---|---|
| Дата: | 2004 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2004
|
| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135238 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Цитувати: | Radiological characterization of metal oxide semiconductor field effect transistor dosimeter / Chan-Hyeong Kim, Sang-Hoon Lee, Baodong Wang, X.George Xu // Functional Materials. — 2004. — Т. 11, № 1. — С. 183-185. — Бібліогр.: 4 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | This paper reports our effort to develop a detailed 3D Monte Carlo simulation model of the High-Sensitivity MOSFET dosimeter using the MCNP 4C code for radiological charac -terization. To determine the dosimeter response accurately, this study has taken three actions: (1) The absorbed dose to the sensitive volume of the dosimeter is calculated directly from electron trajectories; (2) The electrons are forced to make at least ten substeps in the sensitive volume; and (3) ITS-style energy indexing algorithm is used instead of the default MCNP-style energy indexing algorithm. Our results show that the developed model calculates the angular dependence, absorbed dose, and energy dependence of the dosimeter very satisfactorily when we compare the results with the measured values and theoretical values. |
|---|