Luminescence of nanostructures based on semiconductor nitrides
Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher sta...
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| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135304 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1353042018-06-15T03:06:35Z Luminescence of nanostructures based on semiconductor nitrides Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. Characterization and properties Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher stability and better work performance. Apparently, the use of superlattices can compensate for the elastic stresses and piezoelectric fields at the heterointerface. This compensation reduces the formation of dislocations in the structures with superlattices, which increases the intensity of radiation and decreases self-heating effects. 2012 Article Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135304 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. Luminescence of nanostructures based on semiconductor nitrides Functional Materials |
| description |
Light-emitting diode structures on the basis of (Al, Ga, ln)N solid solutions with and without superlattices were investigated. Experiments in a wide range of temperatures (10—300 K) and noise currents (10 nA — 2 mA) were performed. It was found that the structure with superlattices has a higher stability and better work performance. Apparently, the use of superlattices can compensate for the elastic stresses and piezoelectric fields at the heterointerface. This compensation reduces the formation of dislocations in the structures with superlattices, which increases the intensity of radiation and decreases self-heating effects. |
| format |
Article |
| author |
Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. |
| author_facet |
Menkovich, E.A. Tarasov, S.A. Lamkin, I.A. |
| author_sort |
Menkovich, E.A. |
| title |
Luminescence of nanostructures based on semiconductor nitrides |
| title_short |
Luminescence of nanostructures based on semiconductor nitrides |
| title_full |
Luminescence of nanostructures based on semiconductor nitrides |
| title_fullStr |
Luminescence of nanostructures based on semiconductor nitrides |
| title_full_unstemmed |
Luminescence of nanostructures based on semiconductor nitrides |
| title_sort |
luminescence of nanostructures based on semiconductor nitrides |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2012 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135304 |
| citation_txt |
Luminescence of nanostructures based on semiconductor nitrides / E.A. Menkovich, S.A. Tarasov, I.A. Lamkin // Functional Materials. — 2012. — Т. 19, № 2. — С. 223-237. — Бібліогр.: 6 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT menkovichea luminescenceofnanostructuresbasedonsemiconductornitrides AT tarasovsa luminescenceofnanostructuresbasedonsemiconductornitrides AT lamkinia luminescenceofnanostructuresbasedonsemiconductornitrides |
| first_indexed |
2023-10-18T21:09:29Z |
| last_indexed |
2023-10-18T21:09:29Z |
| _version_ |
1796152069471600640 |