HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new h...
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| Дата: | 2012 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135327 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-135327 |
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dspace |
| spelling |
irk-123456789-1353272018-06-15T03:08:46Z HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. Characterization and properties By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current. 2012 Article HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135327 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe Functional Materials |
| description |
By using the EPR method we show that the introduction of the fourth component as the cadmium (Cd) into the solid solution CrₓHg₁₋ₓSe allows for increasing the transition temperature of magnetic ordering in this compound. The resistance, magnetoresistance, and current-voltage characteristics of new heterojunctions HgCdCrSe/HgMnTe are measured as a function of temperature and external magnetic field. The appearance of nonlinear plot on the reverse branch of experimental current-voltage characteristic at a temperature below the temperature of magnetic ordering can be explained by the appearance of spin-polarized current. |
| format |
Article |
| author |
Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. |
| author_facet |
Bekirov, B. Ivanchenko, I. Popenko, N. Tkach, V. |
| author_sort |
Bekirov, B. |
| title |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_short |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_full |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_fullStr |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_full_unstemmed |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe |
| title_sort |
hgcrcdse as an element of new heterostructure hgcrcdse/hgmnte |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2012 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135327 |
| citation_txt |
HgCrCdSe as an element of new heterostructure HgCrCdSe/HgMnTe / B. Bekirov, I. Ivanchenko, N. Popenko, V. Tkach // Functional Materials. — 2012. — Т. 19, № 3. — С. 319-324. — Бібліогр.: 19 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT bekirovb hgcrcdseasanelementofnewheterostructurehgcrcdsehgmnte AT ivanchenkoi hgcrcdseasanelementofnewheterostructurehgcrcdsehgmnte AT popenkon hgcrcdseasanelementofnewheterostructurehgcrcdsehgmnte AT tkachv hgcrcdseasanelementofnewheterostructurehgcrcdsehgmnte |
| first_indexed |
2023-10-18T21:10:53Z |
| last_indexed |
2023-10-18T21:10:53Z |
| _version_ |
1796152139668520960 |