Ion plasma deposition and optical properties of SiC films
SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film...
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| Дата: | 2005 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135335 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ion plasma deposition and optical properties of SiC films / Sh. Muto, V.M. Puzikov, A.V. Lopin, A.V. Semenov // Functional Materials. — 2005. — Т. 12, № 2. — С. 216-223. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1353352018-06-15T03:10:02Z Ion plasma deposition and optical properties of SiC films Semenov, A.V. Lopin, A.V. Puzikov, V.M. Muto, Sh. SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film and increased Urbach parameter. The dependence is non-monotonous in the energy range 30-250 eV. The maximum value of the film optical gap (2.2 eV) is close to the band gap for cubic SiC (2.4 eV). The non-monotonic dependence of the film optical properties and structure parameters on the ion deposition energy in the 30-250 eV range can be connected with difference in behavior of C and Si sublattices in SiC under low-energy ion bombardment. Методом прямого осаждения из потока ионов C и Si с энергиями в диапазоне 30-1500 эВ получены пленки SiC. Осажденные при температуре подложек 600 С пленки являлись структурно и химически разупорядоченными. Повышение энергии осаждения приводило к уменьшению оптической щели пленок и увеличению параметра Урбаха. В диапазоне энергий 30-250 эВ эта зависимость является немонотонной. Максимальное значение оптической щели пленок (2.2 эВ) близко к величине запрещенной зоны кубического карбида кремния (2.4 эВ). Немонотонная зависимость оптических свойств и структурного состояния пленок от энергии осаждения ионов в диапазоне 30-250 эВ моГут быть связаны с различным поведением углеродной и кремниевой подрешеток карбида кремния в условиях низкоэнергетичной ионной бомбардировки. 2005 Article Ion plasma deposition and optical properties of SiC films / Sh. Muto, V.M. Puzikov, A.V. Lopin, A.V. Semenov // Functional Materials. — 2005. — Т. 12, № 2. — С. 216-223. — Бібліогр.: 22 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135335 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film and increased Urbach parameter. The dependence is non-monotonous in the energy range 30-250 eV. The maximum value of the film optical gap (2.2 eV) is close to the band gap for cubic SiC (2.4 eV). The non-monotonic dependence of the film optical properties and structure parameters on the ion deposition energy in the 30-250 eV range can be connected with difference in behavior of C and Si sublattices in SiC under low-energy ion bombardment. |
| format |
Article |
| author |
Semenov, A.V. Lopin, A.V. Puzikov, V.M. Muto, Sh. |
| spellingShingle |
Semenov, A.V. Lopin, A.V. Puzikov, V.M. Muto, Sh. Ion plasma deposition and optical properties of SiC films Functional Materials |
| author_facet |
Semenov, A.V. Lopin, A.V. Puzikov, V.M. Muto, Sh. |
| author_sort |
Semenov, A.V. |
| title |
Ion plasma deposition and optical properties of SiC films |
| title_short |
Ion plasma deposition and optical properties of SiC films |
| title_full |
Ion plasma deposition and optical properties of SiC films |
| title_fullStr |
Ion plasma deposition and optical properties of SiC films |
| title_full_unstemmed |
Ion plasma deposition and optical properties of SiC films |
| title_sort |
ion plasma deposition and optical properties of sic films |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135335 |
| citation_txt |
Ion plasma deposition and optical properties of SiC films / Sh. Muto, V.M. Puzikov, A.V. Lopin, A.V. Semenov // Functional Materials. — 2005. — Т. 12, № 2. — С. 216-223. — Бібліогр.: 22 назв. — англ. |
| series |
Functional Materials |
| work_keys_str_mv |
AT semenovav ionplasmadepositionandopticalpropertiesofsicfilms AT lopinav ionplasmadepositionandopticalpropertiesofsicfilms AT puzikovvm ionplasmadepositionandopticalpropertiesofsicfilms AT mutosh ionplasmadepositionandopticalpropertiesofsicfilms |
| first_indexed |
2023-10-18T21:11:17Z |
| last_indexed |
2023-10-18T21:11:17Z |
| _version_ |
1796152148365410304 |