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Ion plasma deposition and optical properties of SiC films
SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
НТК «Інститут монокристалів» НАН України
2005
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Series: | Functional Materials |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/135335 |
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