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Ion plasma deposition and optical properties of SiC films

SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. The deposition energy increase resulted in a reduced optical slot of the film...

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Bibliographic Details
Main Authors: Semenov, A.V., Lopin, A.V., Puzikov, V.M., Muto, Sh.
Format: Article
Language:English
Published: НТК «Інститут монокристалів» НАН України 2005
Series:Functional Materials
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/135335
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