Effect of ZnGeP₂ annealing in Zn vapor on the laser spectrum
The work is devoted to experimental investigation of the band structure, deep local centers and complexes as well as of generation/recombination processes in the ZnGeP₂ semiconductor crystal. The crystals grown by Bridgeman technique, annealed in Zn vapor and unannealed were studied. The dynamics o...
Збережено в:
| Видавець: | НТК «Інститут монокристалів» НАН України |
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| Дата: | 2005 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135337 |
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| Цитувати: | Effect of ZnGeP₂ annealing in Zn vapor on the laser spectrum / I.I. Patskun, A.V. Rybalko // Functional Materials. — 2005. — Т. 12, № 2. — С. 235-239. — Бібліогр.: 9 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The work is devoted to experimental investigation of the band structure, deep local centers and complexes as well as of generation/recombination processes in the ZnGeP₂ semiconductor crystal. The crystals grown by Bridgeman technique, annealed in Zn vapor
and unannealed were studied. The dynamics of the defect structure change in the ZnGeP₂ crystal due to annealing in Zn vapor has been considered as well as the presumable identification of impurity centers. |
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