Layer interaction in thin film CIS based photovoltaic device
The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occu...
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| Дата: | 2005 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2005
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| Назва видання: | Functional Materials |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135338 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ. |
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irk-123456789-1353382018-06-16T03:09:59Z Layer interaction in thin film CIS based photovoltaic device Klochko, N.P. Volkova, N.D. Dobrotvorskaya, M.V. Mateychenko, P.V. Kopach, V.R. Shkaleto, V.I. Karasyov, S.N. The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occur during ZnSe electrodeposition from solution on the ITO or CIS surfaces as well as during vacuum annealing used in the technological process to modify the CIS crystal structure. The investigations using scanning electron microscopy, energy dispersing X-ray spectroscopy, electron-probe microanalysis, X-ray diffractometry, and X-ray photoelectron spectroscopy have shown that during vacuum annealing of the glass/Mo/CIS/ZnSe compositions, the buffer layer is purified of contamination, but the same annealing of the glass/Mo/ITO/ZnSe compositions enriches the buffer layer in indium and transforms it into ZnlnᵪSeᵧ. Функционирование тонкопленочного фотоэлектрического преобразователя (ФЭП) на базе диселенида меди и индия (CIS) непосредственно зависит от характера взаимодействия контактирующих в нем базового слоя CIS, буферного слоя ZnSe и прозрачной электропроводной пленки оксида индия и олова (ITO). Такое взаимодействие может иметь место как в процессе электрохимического осаждения ZnSe из раствора на поверхность ITO или CIS, так и в процессе вакуумных отжигов, используемых в технологическом процессе изготовления ФЭП для модификации кристаллической структуры CIS. Исследования методами электронной микроскопии в режимах сканирования поверхности и рентгеновского микроанализа, рентгеновской спектроскопии с дисперсией по энергиям, рентгеновской дифрактометрии и рентгеновской фотоэлектронной спектроскопии позволили обнаружить, что в процессе вакуумных отжигов композитов стекло/Mo/CIS/ZnSe буферный слой очищается от примесей, тогда как при отжигах композитов стекло/Mo/ITO/ZnSe он обогащается индием и превращается в ZnlnᵪSeᵧ. 2005 Article Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135338 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The function of thin film photovoltaic device on the base of copper indium diselenide (CIS) depends immediately on the character of interactions in the layers being in contact therein: base CIS layer, buffer ZnSe layer, transparent conductive film of indium-tin oxide (ITO). Such interaction may occur during ZnSe electrodeposition from solution on the ITO or CIS surfaces as well as during vacuum annealing used in the technological process to modify the CIS crystal structure. The investigations using scanning electron microscopy, energy dispersing X-ray spectroscopy, electron-probe microanalysis, X-ray diffractometry, and X-ray photoelectron spectroscopy have shown that during vacuum annealing of the glass/Mo/CIS/ZnSe compositions, the buffer layer is purified of contamination, but the same annealing of the glass/Mo/ITO/ZnSe compositions enriches the buffer layer in indium and transforms it into ZnlnᵪSeᵧ. |
| format |
Article |
| author |
Klochko, N.P. Volkova, N.D. Dobrotvorskaya, M.V. Mateychenko, P.V. Kopach, V.R. Shkaleto, V.I. Karasyov, S.N. |
| spellingShingle |
Klochko, N.P. Volkova, N.D. Dobrotvorskaya, M.V. Mateychenko, P.V. Kopach, V.R. Shkaleto, V.I. Karasyov, S.N. Layer interaction in thin film CIS based photovoltaic device Functional Materials |
| author_facet |
Klochko, N.P. Volkova, N.D. Dobrotvorskaya, M.V. Mateychenko, P.V. Kopach, V.R. Shkaleto, V.I. Karasyov, S.N. |
| author_sort |
Klochko, N.P. |
| title |
Layer interaction in thin film CIS based photovoltaic device |
| title_short |
Layer interaction in thin film CIS based photovoltaic device |
| title_full |
Layer interaction in thin film CIS based photovoltaic device |
| title_fullStr |
Layer interaction in thin film CIS based photovoltaic device |
| title_full_unstemmed |
Layer interaction in thin film CIS based photovoltaic device |
| title_sort |
layer interaction in thin film cis based photovoltaic device |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135338 |
| citation_txt |
Layer interaction in thin film CIS based photovoltaic device / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, P.V. Mateychenko, V.R. Kopach, V.I. Shkaleto, S.N. Karasyov // Functional Materials. — 2005. — Т. 12, № 2. — С. 228-233. — Бібліогр.: 12 назв. — англ. |
| series |
Functional Materials |
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| first_indexed |
2023-10-18T21:11:57Z |
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2023-10-18T21:11:57Z |
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