Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure

• Дата: 2012
• Автори: Vovk, R.V., Khadzhai, G.Ya., Nazyrov, Z.F.
• Формат: Стаття
• Мова: English
• Опубліковано: НТК «Інститут монокристалів» НАН України 2012
• Назва видання: Functional Materials
• Теми: Characterization and properties
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/135379
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ.

The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure.