Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure
The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relax...
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| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2012
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| Назва видання: | Functional Materials |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/135379 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1353792018-06-17T10:11:49Z Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. Characterization and properties The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure. 2012 Article Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. 1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/135379 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure Functional Materials |
| description |
The influence of high hydrostatic pressure on electrical resistance in afr-plane of oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ has been studied. It was found that high-pressure-in-duced redistribution of labile oxygen leaded to increasing phase separation, which was accompanied by a process of structural relaxation and uphill diffusion in the bulk of the pilot sample. It has been suggested that the generation of low-temperature (oxygen-depleted) phase can occur at twin boundaries. The temperature dependence of the resistivity above Tc can be accurately approximated by the model s-d-electron scattering by phonons. Application of high pressure leads to a decrease of the resistance, which at high temperatures is much larger than at low temperatures. This may be due to the weakening the electron-phonon interaction with increasing pressure. |
| format |
Article |
| author |
Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. |
| author_facet |
Vovk, R.V. Khadzhai, G.Ya. Nazyrov, Z.F. |
| author_sort |
Vovk, R.V. |
| title |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_short |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_full |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_fullStr |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_full_unstemmed |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| title_sort |
evolution of normal electrical resistance in oxygen underdoped ho₁ba₂cu₃o₇₋δ single crystals in the process of application-removal of high hydrostatic pressure |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2012 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/135379 |
| citation_txt |
Evolution of normal electrical resistance in oxygen underdoped Ho₁Ba₂Cu₃O₇₋δ single crystals in the process of application-removal of high hydrostatic pressure / R.V. Vovk, G.Ya. Khadzhai, Z.F. Nazyrov // Functional Materials. — 2012. — Т. 19, № 4. — С. 452-458. — Бібліогр.: 23 назв. — англ. |
| series |
Functional Materials |
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2023-10-18T21:11:44Z |
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