Structural and optical characteristics of disordered silicon carbide films

Using spectrophotometry and electron microscopy, the properties of disordered SiC films have been studied. A nontrivial character of spectral absorption has been revealed depending on the structural and polytype constitution of the films. SiC polytypes forming the film and the band gap widths have b...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2008
Автор: Lopin, A.V.
Формат: Стаття
Мова:English
Опубліковано: НТК «Інститут монокристалів» НАН України 2008
Назва видання:Functional Materials
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/135608
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural and optical characteristics of disordered silicon carbide films // A.V. Lopin // Functional Materials. — 2008. — Т. 15, № 4. — С. 492-495. — Бібліогр.: 6 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:Using spectrophotometry and electron microscopy, the properties of disordered SiC films have been studied. A nontrivial character of spectral absorption has been revealed depending on the structural and polytype constitution of the films. SiC polytypes forming the film and the band gap widths have been determined. It has been shown that in this case, it is possible to obtain the information on the optical band-to-band transition modification depending on the film structure property and phase composition as well as on the influence of various phases and SiC film crystallinity extent on the band gap width.