Infrared heaters with thin-film conductive layers were synthesized on the glass by the magnetron sputtering
This paper examines the infrared heating panels with thin conductivite layer. An oxide semiconductor thin film layer is proposed for improvements of the heating layer’s reliability and stability. Characteristics of the oxide semiconductor thin film’s materials are analyzed and tin oxide film are sel...
Збережено в:
| Дата: | 2017 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Національний науковий центр «Харківський фізико-технічний інститут» НАН України
2017
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| Назва видання: | Вопросы атомной науки и техники |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136168 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Infrared heaters with thin-film conductive layers were synthesized on the glass by the magnetron sputtering / V.V. Lytvynenko, I.N. Shmidko, E.V. Rodionov // Вопросы атомной науки и техники. — 2017. — № 5. — С. 98-102. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | This paper examines the infrared heating panels with thin conductivite layer. An oxide semiconductor thin film layer is proposed for improvements of the heating layer’s reliability and stability. Characteristics of the oxide semiconductor thin film’s materials are analyzed and tin oxide film are selected for further research. The results of the experiments and the characteristics of the films depending on technological factors had been given. Considered parameters of infrared radiant heating glass panels with a thin film heating layer. Established maximum allowable electrical parameters of the IR radiating panels with a thin film heating layer, as well as the possibility of increasing the efficiency of IR panels and power savings. |
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